US Patent Issued to SK hynix on Sept. 16 for "Memory for improving performance of read retry operation, storage device, and method for operating storage device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,032, issued on Sept. 16, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory for improving performance of read retry operation, storage device, and method for operating storage device" was invented by In Jong Jang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A storage device may comprise a memory including a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a controller. The controller may assess an external environmental state when a read operation on the memory fails and control a read retry operation using at least one of at least two read retry tables that are set for each ...