US Patent Issued to SK hynix on Sept. 16 for "Memory device including error correction device" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,815, issued on Sept. 16, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device including error correction device" was invented by Jin Ho Jeong (Gyeonggi-do, South Korea), Dae Suk Kim (Gyeonggi-do, South Korea), Sang Woo Yoon (Gyeonggi-do, South Korea), A Ram Rim (Gyeonggi-do, South Korea) and Mun Seon Jang (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell area including a plurality of cell blocks divided into a plurality of normal cell blocks, at least one ECC cell block, and at least one redundancy cell block, the plurality of cell blocks being configured to output da...