US Patent Issued to SK hynix on Sept. 16 for "Manufacturing method of a semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,045, issued on Sept. 16, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Manufacturing method of a semiconductor memory device" was invented by Sang Hyon Kwak (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor memory device includes: forming a stack structure including interlayer insulating layers and sacrificial layers, which are alternately stacked; forming an upper insulating layer covering the stack structure; forming a preliminary isolation structure in the upper insulating layer; forming a slit penetrating the upper insulating layer and the stack structure; replacing the s...