US Patent Issued to SK HYNIX on Oct. 7 for "Image sensing device with improved transfer transistor" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,711, issued on Oct. 7, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Image sensing device with improved transfer transistor" was invented by Jong Hwan Shin (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Image sensing devices are disclosed. In some implementations, an image sensing device may include a substrate including an upper region and a lower region, a photoelectric conversion element structured to convert light into electrical charges and formed in the lower region of the substrate, a floating diffusion region formed in the upper region of the substrate and coupled to receive the electrical charges from the p...