US Patent Issued to SK hynix on Oct. 28 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,624, issued on Oct. 28, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Se Ra Hwang (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a dielectric structure in which etch stop structures and low-k layers are alternately stacked over a substrate; and a metal interconnection electrically connected to the substrate in the dielectric structure, wherein each one of the etch stop structures includes: a first etch stop layer including a hydrogen blocking material; and a second etch stop layer formed over the first etc...