US Patent Issued to SK hynix on Oct. 28 for "Page buffer, semiconductor memory having the same, and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,455,690, issued on Oct. 28, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Page buffer, semiconductor memory having the same, and operating method thereof" was invented by Han Seo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A page buffer, a semiconductor memory having the same, and an operating method thereof are provided. The page buffer includes a first current supply circuit connected to a bit line, the first current supply circuit connecting or blocking a power voltage node to or from a common sensing node based on a potential level of the bit line; a second current supply circuit for controlling a potential leve...