US Patent Issued to SK hynix on Oct. 28 for "In-nand read threshold voltage search system and method" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,526, issued on Oct. 28, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"In-nand read threshold voltage search system and method" was invented by Meysam Asadi (San Jose, Calif.) and Fan Zhang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system and a method for searching for an optimal read threshold voltage. A memory device transfers to a controller only needed information (i.e., count formation) for each read, instead of transferring all the read data. The memory device includes: a pattern counter configured to: receive, from a memory cell, read data item, among multiple data items, corresponding to a read request; c...