US Patent Issued to SK hynix on Oct. 21 for "Memory device related to verifying memory cells in an erase state and method of operating the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,200, issued on Oct. 21, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device related to verifying memory cells in an erase state and method of operating the memory device" was invented by Hyung Jin Choi (Icheon-si, South Korea) and Chan Sik Park (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein is a memory device and a method of operating the memory device. The memory device includes memory cells coupled to a word line, a peripheral circuit configured to perform a program operation of increasing threshold voltages of the memory cells to threshold voltages corresponding to a target program state ...