US Patent Issued to SK hynix on Oct. 21 for "Memory device and method of operating the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,203, issued on Oct. 21, was assigned to SK hynix Inc. (Incheon-si, South Korea).

"Memory device and method of operating the memory device" was invented by Jae Woong Kim (Icheon-si, South Korea) and Kyu Nam Lim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of the present technology includes a memory device and a method of operating the memory device. The memory device includes a memory block, a peripheral circuit configured to increase a threshold voltage of memory cells selected among memory cells included in the memory block according to logic data, detect low-level cells having a threshold voltage higher than...