ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,080, issued on Oct. 21, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Memory device and method for fabricating the same" was invented by Kang Sik Choi (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a highly integrated memory device and a method for manufacturing the same. According to the disclosure, a memory device comprises a lower structure, an active layer horizontally oriented parallel to a surface of the lower structure, a bit line connected to a first end of the active layer and vertically oriented from the surface of the lower structure, a capacitor connected to a second end of...