ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,198, issued on Oct. 21, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"In-memory read threshold adaptation" was invented by Pengfei Huang (San Jose, Calif.) and Fan Zhang (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device of a storage device may perform a test read of the memory device for each entry of a set of entries of an in-memory history read retry (HRR) table using a set of read thresholds corresponding to that entry. The memory device may identify an entry in the set of entries having a lowest failed bit count (FBC) obtained from the test read of each entry, and update the in-memory HRR table to have ...