US Patent Issued to SK hynix on Oct. 14 for "Semiconductor memory device and manufacturing method of the semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,224, issued on Oct. 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and manufacturing method of the semiconductor memory device" was invented by Kang Sik Choi (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes: a substrate including a peripheral circuit, a gate stack structure disposed over the substrate and including a cell array region and a stepped region that extends from the cell array region, a channel structure passing through the cell array region of the gate stack structure, a ...