ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,229, issued on Oct. 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Semiconductor device including ferroelectric layer" was invented by Joong Sik Kim (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment includes a substrate, a bit line and a source line extending in a vertical direction substantially perpendicular to a surface of the substrate, a semiconductor layer disposed between the source line and the bit line on a plane substantially parallel to the surface of the substrate, a non-ferroelectric layer pattern disposed on the semiconductor layer, a floating electrod...