US Patent Issued to SK hynix on Oct. 14 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,288, issued on Oct. 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Jun Sik Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: an isolation layer formed to define active regions including active fins in a substrate; gate trenches extending across the active fins and the isolation layer; and buried gates that fill the gate trenches, and include fin gates disposed on sidewalls of the active fins, active gates disposed over the active fins, and passing gates disposed over the isolation layer, wherein bottom...