US Patent Issued to SK hynix on Oct. 14 for "Resistive memory device and manufacturing method of the resistive memory device" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,234, issued on Oct. 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Resistive memory device and manufacturing method of the resistive memory device" was invented by In Ku Kang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device includes: a stack structure in which a plurality of interlayer insulating layers and a plurality of conductive layers are alternately stacked; a hole penetrating the stack structure through the plurality of interlayer insulating layers and the plurality of conductive layers; a plurality of insulating patterns formed on a sidewall of each of the plurality of interlayer ...