US Patent Issued to SK hynix on Oct. 14 for "Memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,226, issued on Oct. 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of manufacturing the same" was invented by Jae Taek Kim (Icheon-si, South Korea) and Hye Yeong Jung (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of manufacturing the same, includes a source layer over which a cell region and a peripheral circuit region are defined, memory blocks formed on the source layer in the cell region, and a slit formed between the memory blocks. The memory device also includes a resistor formed in the source layer in the peripheral circuit region, contacts formed on ...