US Patent Issued to SK hynix on Nov. 4 for "Semiconductor memory device and a manufacturing method of the semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,717, issued on Nov. 4, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and a manufacturing method of the semiconductor memory device" was invented by Jae Young Oh (Icheon-si, South Korea) and Joong Gyu Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a plurality of conductive patterns and a plurality of second interlayer insulating layers arranged alternately with each other under a first interlayer insulating layer. The semiconductor memory device also includes a doped semiconductor layer including an amorphous area overlapping the first interlayer ...