US Patent Issued to SK hynix on Nov. 4 for "Semiconductor device having metal nitride gate doped with a low work function" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,707, issued on Nov. 4, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device having metal nitride gate doped with a low work function" was invented by Dong Soo Kim (Gyeonggi-do, South Korea) and Se Han Kwon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a trench formed in a substrate; a gate dielectric layer covering sidewalls and a bottom surface of the trench; a first gate electrode gap-filling a bottom portion of the trench over the gate dielectric layer; a second gate electrode including a metal nitride which is the same as the first gate electrode over the first...