US Patent Issued to SK hynix on Nov. 4 for "Semiconductor device having a lateral conductive line included low and high work function electrodes" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,705, issued on Nov. 4, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device having a lateral conductive line included low and high work function electrodes" was invented by Jin Sun Cho (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a lateral layer spaced apart from a lower structure and extending in a direction parallel to the lower structure; a vertical conductive line extending in a direction perpendicular to the lower structure and coupled to a first-side end of the lateral layer; a data storage element coupled to a second-side end of the lateral layer; and a lat...