ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,961, issued on Nov. 4, was assigned to SK HYNIX INC. (Icheon-si, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Gwang Hyuk Shin (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include: a first conductive line including an opening passing through the first conductive line; a second conductive line disposed over the first conductive line and spaced apart from the first conductive line; a first electrode layer buried in the opening; a selector layer disposed in the opening and surrounding side surfaces of the first electrode layer; and a variable resistance layer...