US Patent Issued to SK hynix on Nov. 4 for "Page buffer circuit and read operation method of memory" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,884, issued on Nov. 4, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Page buffer circuit and read operation method of memory" was invented by Jae Woong Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a read operation method of a memory, and the read operation method may include evaluating a sensing node according to a voltage level of a bit line, sensing a voltage level of the sensing node after a first time elapses from a start of the evaluation, and sensing the voltage level of the sensing node after a second time longer than the first time elapses from the start of the evaluation."

The patent...