US Patent Issued to SK hynix on Nov. 4 for "Memory device preventing generation of under-programmed memory cell, memory system including the same and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,885, issued on Nov. 4, was assigned to SK hynix INc. (Icheon-si, South Korea).

"Memory device preventing generation of under-programmed memory cell, memory system including the same and operating method thereof" was invented by Sung Yong Lim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory block, peripheral circuit, and control logic. The memory block includes a plurality of pages coupled to a plurality of word lines, respectively. The peripheral circuit is configured to perform a program loop including a program pulse operation of applying a program voltage to a selected word line, and a verify...