ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,879, issued on Nov. 4, was assigned to SK hynix Inc. (Icheon-si Gyeonggi-do, South Korea).

"Memory device and operating method of the memory device" was invented by Dong Uk Lee (Icheon-si Gyeonggi-do, South Korea), Yun Cheol Kim (Icheon-si Gyeonggi-do, South Korea) and Hae Chang Yang (Icheon-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a memory device and an operating method of the memory device. The memory device includes: a memory block including a plurality of sub-blocks; a peripheral circuit for performing first program and erase operations in a first manner in a first sub-block, among the pluralit...