ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,878, issued on Nov. 4, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of operating the same" was invented by Hyun Seob Shin (Icheon-si, South Korea) and Dong Hun Kwak (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology relates to an electronic device. According to the present technology, a memory device may include a plurality of memory cells, a read and write circuit, and a program controller. The plurality of memory cells may be connected to a plurality of channels passing through a plurality of word lines. The program controller may control the read and write circuit to p...