US Patent Issued to SK hynix on Nov. 25 for "Semiconductor device having channel isolation structure" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,221, issued on Nov. 25, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device having channel isolation structure" was invented by Dong Hun Kwak (Icheon-si, South Korea), Moon Soo Sung (Icheon-si, South Korea), Sung Lae Oh (Icheon-si, South Korea) and Woo Pyo Jeong (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure including a first select line, a second select line, a first wordline, a second wordline, and a third select line. The semiconductor device also includes a first channel layer passing through the second wordline and the third select line. The semic...