US Patent Issued to SK hynix on Nov. 25 for "Manufacturing method of a semiconductor device with a stepped memory film" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,223, issued on Nov. 25, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Manufacturing method of a semiconductor device with a stepped memory film" was invented by Nam Jae Lee (Icheon-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure; a source structure; a channel structure penetrating the stack structure, the channel structure being connected to the source structure; and a first memory layer interposed between the channel structure and the stack structure. The source structure includes a...