US Patent Issued to SK hynix on Nov. 18 for "Semiconductor device with low k spacer and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,721, issued on Nov. 18, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device with low k spacer and method for fabricating the same" was invented by Se Ra Hwang (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a bit line structure and a storage contact spaced apart from each other over a substrate; a bit line spacer formed on a sidewall of the bit line structure; a landing pad formed over the storage contact; a boron-containing capping layer disposed between the bit line structure and the landing pad; a boron-containing etch stop layer over the boron-containing capping...