ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,720, issued on Nov. 18, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Seung Hwan Kim (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a highly integrated memory cell and a semiconductor device including the same. According to an embodiment of the present invention, the semiconductor device comprises: a plurality of active layers vertically stacked over a substrate; a plurality of bit lines connected to first ends of the active layers, respectively, and extended parallel to the substrate; line-shape air gaps di...