US Patent Issued to SK hynix on Nov. 18 for "Resistive memory device and manufacturing method of the resistive memory device" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,959, issued on Nov. 18, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Resistive memory device and manufacturing method of the resistive memory device" was invented by In Ku Kang (Icheon-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a resistive memory device and a manufacturing method of the resistive memory device. The resistive memory device includes: a stack structure in which a plurality of interlayer insulating layers and a plurality of conductive layers are alternately stacked; a hole penetrating the stack structure in a vertical direction; and a gate insulating layer, a channel layer, ...