US Patent Issued to SK hynix on Nov. 18 for "Method of manufacturing three-dimensional semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,731, issued on Nov. 18, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Method of manufacturing three-dimensional semiconductor memory device" was invented by Moon Sik Seo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a three-dimensional semiconductor memory device includes forming a preliminary channel hole through a vertical stack structure including first layers and second layers that are alternately stacked, oxidizing an inner surface of the preliminary channel hole to form a sacrificial layer, removing the sacrificial layer to form a final channel hole, and forming a channel plug in th...