US Patent Issued to SK hynix on Nov. 18 for "Method for fabricating a semiconductor device including a MOS transistor having a silicide layer" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,112, issued on Nov. 18, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Method for fabricating a semiconductor device including a MOS transistor having a silicide layer" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a MOS transistor includes: forming a gate dielectric material layer over a substrate; forming a lower gate electrode material layer over the gate dielectric material layer; performing a first ion bombardment process of bombarding the lower gate electrode material layer with first ions; forming an intermediate gate electrode material layer incl...