US Patent Issued to SK hynix on Nov. 18 for "CMOS device, method of manufacturing CMOS device, and semiconductor memory device including CMOS device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,729, issued on Nov. 18, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"CMOS device, method of manufacturing CMOS device, and semiconductor memory device including CMOS device" was invented by Dong Uk Lee (Icheon-si, South Korea) and Hae Chang Yang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A CMOS device, and a method of manufacturing the same, includes a semiconductor substrate and a trench formed in the semiconductor substrate. The CMOS device also includes an oxide semiconductor layer disposed in the trench, the oxide semiconductor layer including a source region, a drain region, and a channel region between t...