US Patent Issued to SK hynix on Nov. 11 for "Semiconductor device including charge retention node" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,522, issued on Nov. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including charge retention node" was invented by Woo Cheol Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include first and second transistors on a substrate. The first transistor may include first and second source/drain regions; a first channel region between the first and second source/drain regions; a first gate electrode over the first channel region; and a charge retention node between the first channel region and the first gate electrode. The second transistor may include third and fourth...