US Patent Issued to SK hynix on Nov. 11 for "Phase shift mask for EUV lithography and manufacturing method for the phase shift mask" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,468,216, issued on Nov. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Phase shift mask for EUV lithography and manufacturing method for the phase shift mask" was invented by Tae Joong Ha (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with...