US Patent Issued to SK hynix on Nov. 11 for "Method of manufacturing a semiconductor device having three-dimensional cell structure" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,509, issued on Nov. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Method of manufacturing a semiconductor device having three-dimensional cell structure" was invented by Jae Hyun Han (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device comprises: providing a substrate having a base insulation layer; forming, over the base insulation layer, a plurality of first word line structures extending in a first lateral direction and a first switching functional layer disposed between the plurality of first word line structures, the plurality of first word line structures; formin...