ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,566, issued on Nov. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device performing read operation and method of operating the same" was invented by Hyeok Chan Sohn (Icheon-si, South Korea), Beom Ju Shin (Icheon-si, South Korea), Byung Ryul Kim (Icheon-si, South Korea) and Kang Wook Jo (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology relates to an electronic device. A memory device according to the present technology may include a first plane, a second plane, a data input/output circuit, and an encoder. The data input/output circuit may output data read from the first and second plan...