US Patent Issued to SK hynix on Nov. 11 for "Memory device and operating method of the memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,564, issued on Nov. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of the memory device" was invented by Nam Cheol Jeon (Icheon-si, South Korea) and Chang Beom Woo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of the present disclosure relates to a memory device configured to: apply an erase voltage and a first pass voltage at a first time, apply a turn-on voltage at a second time before a level of the erase voltage increases to a target level, maintain the erase voltage, the first pass voltage, and the turn-on voltage at a third time when the level of the erase ...