US Patent Issued to SK hynix on May 27 for "Semiconductor device including spacer layer contacting bit line bottom sidewalls" (South Korean Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,766, issued on May 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including spacer layer contacting bit line bottom sidewalls" was invented by Kyung Min Park (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes: forming a stack body over a substrate; forming channel structures in the stack body, the channel structures having a channel layer penetrating the stack body; forming a contact-level dielectric layer over the stack body and the channel structures; forming a contact hole penetrating the contact-level dielectric layer; forming contact ...