ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,516, issued on May 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including capacitors and manufacturing method thereof" was invented by Hyun Soo Shin (Icheon-si, South Korea) and Sung Lae Oh (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack including a plurality of electrode layers which include a plurality of capacitor first electrode layers and a plurality of capacitor second electrode layers alternately stacked on a substrate and a plurality of dielectric layers which are disposed alternately with the plurality of electrode layers; a first conductive ...