US Patent Issued to SK hynix on May 27 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,480, issued on May 27, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Mir Im (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; a seed layer over the substrate; a perovskite-based channel layer over the seed layer; a bit line coupled to one side of the perovskite-based channel layer and extending in a direction perpendicular to the substrate; a capacitor coupled to another side of the perovskite-based channel layer; a word line crossing an upper surface of the perovskite-based channel layer; and a ...