US Patent Issued to SK hynix on May 27 for "Memory device including sense amplifying circuit" (South Korean Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,579, issued on May 27, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device including sense amplifying circuit" was invented by Yeonsu Jang (Icheon-si, South Korea), Woongrae Kim (Icheon-si, South Korea) and Jung Min Yoon (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a sense amplifying circuit coupled between a pull-up voltage line and a pull-down voltage line and configured to sense and amplify data of bit lines according to a sensing control signal; a fail detection circuit configured to calculate counting values of fail bits for each temperature based on the data and configured...