US Patent Issued to SK hynix on May 27 for "Memory device and operating method of the memory device" (South Korean Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,582, issued on May 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of the memory device" was invented by Min Ho Her (Icheon-si, South Korea), Seung Il Kim (Icheon-si, South Korea), Jae Min Lee (Icheon-si, South Korea), Myoung Kyun Kim (Icheon-si, South Korea) and Won Gyu Park (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device configured to select a page having a probability that uncorrectable error correction codes (UECC) will occur by comparing a reference current with a sensing current, and configured to perform a read reclaim operation or an additional pulse apply...