US Patent Issued to SK hynix on May 20 for "Semiconductor device including interconnection structure including MXene and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,311, issued on May 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including interconnection structure including MXene and method of manufacturing the same" was invented by Won Tae Koo (Icheon-si, South Korea) and Jae Hyun Han (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first conductive layer including a first metal, a second conductive layer electrically connected to the first conductive layer and including a second metal, and an interconnection structure common to a connection portion of the first and second conductive layers. The interconnection structu...