US Patent Issued to SK hynix on May 20 for "Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,039, issued on May 20, was assigned to SK hynix Inc. (Icheon-si, Japan).

"Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the same" was invented by Won Tae Koo (Icheon-si, South Korea) and Dong Ik Suh (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment of the present disclosure includes a substrate, a first epitaxial electrode layer disposed on the substrate, a ferroelectric epitaxial layer disposed on the first epitaxial electrode layer, a dielectric epitaxial layer disposed on the ferroelectric epitaxial laye...