US Patent Issued to SK hynix on May 20 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,317, issued on May 20, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Se Ra Hwang (Gyeonggi-do, South Korea) and Jun Sik Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; multi-level interconnections disposed on the substrate; a first passivation layer containing hydrogen and covering top interconnections among the multi-level interconnections; a second passivation layer disposed over the first passivation layer to prevent out-diffusion of the hydrogen from the first passivation layer; an in-li...