ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,568, issued on May 13, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Semiconductor memory device including a discharge contact" was invented by Kwang Hwi Park (Icheon-si, South Korea), Sang Hyun Sung (Icheon-si, South Korea) and Sung Lae Oh (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a memory structure including a plurality of memory cells which are disposed on a cell region of a source plate; a plurality of contact plugs passing through the source plate in a coupling region of the source plate including at least a portion of a center portion of the source plate, and separa...