US Patent Issued to SK hynix on May 13 for "Semiconductor memory device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,574, issued on May 13, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and method for fabricating the same" was invented by Young Rok Kim (Icheon-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes: a gate electrode stack vertically stacked over a substrate with bent gate pads, the bent gate pads portion of the gate electrode stack having a step-shaped structure; an inter-layer dielectric layer covering the bent gate pads; and a plurality of contact plugs respectively coupled to the bent gate pads by penetrating the inter-layer dielectric layer, wherei...