US Patent Issued to SK hynix on May 13 for "Semiconductor device including transistor including horizontal gate structure and vertical channel layer and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,601, issued on May 13, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device including transistor including horizontal gate structure and vertical channel layer and method for fabricating the same" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first stacked structure including a first lower dielectric layer, a first horizontal gate structure, and a first upper dielectric layer stacked vertically; a second stacked structure including a second lower dielectric layer, a second horizontal gate structure, and a second upper dielectric ...