ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,547, issued on May 13, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of manufacturing the memory device" was invented by Jae Taek Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein may be a memory device and a method of manufacturing the memory device. The memory device may include a connection structure formed on a substrate, lower contacts formed on the connection structure, upper contacts formed on the lower contacts, a dummy pattern configured to enclose the lower contacts and spaced apart from the lower contacts, etching stop patterns formed in an upper region of the du...