ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,851, issued on May 13, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Error correction of memory" was invented by Eun Hyup Doh (Gyeonggi-do, South Korea) and Man Keun Kang (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes: a data receiving circuit suitable for receiving a data during a write operation; a data rotation circuit suitable for changing an order of the data transferred from the data receiving circuit and outputting the data whose order is changed in response to an address during the write operation; an error correction code generation circuit suitable for generating an error correction ...